Our competence
Generally, the development of novel products or materials and the defect analysis requires a simple but precise solution for application-oriented requests. By means of high-resolution field emission scanning electron microscopy (FE-SEM) surfaces and cross sections can be imaged with a resolution in the micro- and nanometer range and a high depth of focus. Samples can be analyzed without a time-consuming preparation and the resulting images exhibit high information content due to the three-dimensional effect of the structures. Also radiation-sensitive materials (e.g. polymers) can be investigated by the use of low acceleration voltages. By determining the chemical composition using energy-dispersive X-ray spectroscopy (EDX) an extensive characterization of samples, defects, contaminations, etc. is possible.
Technical specifications
SEM:
- Acceleration voltage 0.1-30 kV
- Lateral resolution up to ca. 3 nm
- Sample geometry max. Ø = 250 mm, h = 145 mm
EDX :
- Quantitative analysis of elements
- Setectable elements boron - polonium
- Lower detection limit ca. 0.1-1 %
- Lateral resolution up to min. 0.4 µm
- Depth of information ca. 1 µm
Our work
- Investigation of surface topography
- Microstructure analysis of coatings
- Chemical analysis by energy dispersive X-ray spectroscopy (EDX)
- Analysis of defects on both coated and uncoated samples
- Element mapping